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300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 1 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited general description the ap2125 series are 300ma, positive voltage regu- lator ics fabricated by cmos process. each of these ics is equipped with a voltage reference, an error amplifier, a resistor network for setting output voltage, a chip enable circuit, a current limit circuit and otsd (over temperature shut down) circuit to prevent the ic from over current and over temperature. the ap2125 series have features of high ripple rejec- tion, low dropout voltage, low noise, high output volt- age accuracy and low current consumption which make them ideal for use in various battery-powered apparatus. the ap2125 have 1.8v, 2.5v , 2.8v, 3.0v, 3.3v, 4.15v and 4.2v fixed voltage versions. these ics are available in tiny sc-70-5 and sc-82 packages as well as industry standard sot-23-3 and sot-23-5 packages. features excellent ripple rejection: 70db typical (1.8v version) low dropout voltage: 65mv (i out =100ma, 3.3v version) low standby current: 0.01a typical low quiescent current: 60a typical extremely low noise: 50vrms typical maximum output current: 300ma (min.) high output voltage accuracy: 2% compatible with low esr ceramic capacitor excellent line/load regulation applications cdma/gsm cellular handsets battery-powered equipments laptops, palmtops, notebook computers hand-held instruments pcmcia cards portable information appliances figure 1. package types of ap2125 sot-23-3 sot-23-5 sc-70-5 sc-82
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 2 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 2. pin configuratio n of ap2125 (top view) n package (sot-23-3) pin configuration k/ks package (sot-23-5/sc-70-5) pin description pin number pin name function sot-23-3 sot-23-5/ sc-70-5 sc-82 314v in input voltage 1 2 2 gnd ground 3 1 ce active high enable input pin. l ogic high=enable, l ogic low=shutdown 4 nc no connection 253v out regulated output voltage kc package (sc-82) 3 2 1 v in gnd v out 1 2 34 5 v out nc ce gnd v in 1 2 3 4 ce gnd v out v in
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 3 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited functional block diagram figure 3. functional block diagram of ap2125 v in gnd v ref shutdown and logic control mos driver current limit and thermal protection v ref shutdown and logic control mos driver current limit and thermal protection v out v in gnd v out ce sot-23-3 a sot-23-5/sc-70-5 3 2 1 3 (1) 2 (2) 1 (4) 5 (3) b sc-82 a(b)
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 4 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited package temperature range part number marking id packing type lead free green lead free green sot-23-3 -40 to 85 o c ap2125n-1.8tre1 ap2125n-1.8trg1 ej2 gj2 tape & reel ap2125n-2.5tre1 ap2125n-2.5trg1 ej4 gj4 tape & reel ap2125n-2.8tre1 ap2125n-2.8trg1 ej5 gj5 tape & reel ap2125n-3.0tre1 ap2125n-3.0trg1 ej6 gj6 tape & reel ap2125n-3.3tre1 ap2125n-3.3trg1 ej7 gj7 tape & reel ap2125n-4.2tre1 ap2125n-4.2trg1 ej3 gj3 tape & reel sot-23-5 -40 to 85 o c ap2125k-1.8tre1 ap2125k-1.8trg1 ecb gcb tape & reel ap2125k-2.5tre1 ap2125k-2.5trg1 ecd gcd tape & reel ap2125k-2.8tre1 ap2125k-2.8trg1 ece gce tape & reel ap2125k-3.0tre1 ap2125k-3.0trg1 ecf gcf tape & reel ap2125k-3.3tre1 ap2125k-3.3trg1 ecg gcg tape & reel ap2125k-4.15trg1 gcj tape & reel ap2125k-4.2tre1 ap2125k-4.2trg1 ecc gcc tape & reel sc-70-5 -40 to 85 o c ap2125ks-1.8tre1 ap2125ks-1.8trg1 26 b6 tape & reel ap2125ks-2.5tre1 ap2125ks-2.5trg1 35 c5 tape & reel ap2125ks-2.8tre1 ap2125ks-2.8trg1 27 b7 tape & reel ap2125ks-3.0tre1 ap2125ks-3.0trg1 36 c6 tape & reel ap2125ks-3.3tre1 ap2125ks-3.3trg1 28 b8 tape & reel ap2125ks-4.2tre1 ap2125ks-4.2trg1 34 c4 tape & reel sc-82 -40 to 85 o c ap2125kc-1.8tre1 ap2125kc-1.8trg1 91 t1 tape & reel ap2125kc-2.5tre1 ap2125kc-2.5trg1 96 t6 tape & reel ap2125kc-2.8tre1 ap2125kc-2.8trg1 92 t2 tape & reel ap2125kc-3.0tre1 ap2125kc-3.0trg1 97 t7 tape & reel ap2125kc-3.3tre1 ap2125kc-3.3trg1 93 t3 tape & reel ap2125kc-4.2tre1 ap2125kc-4.2trg1 95 t5 tape & reel circuit type package n: sot-23-3 e1: lead free ap2125 - tr: tape and reel k: sot-23-5 ks: sc-70-5 ordering information 2.8: fixed output 2.8v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.0: fixed output 3.0v 3.3: fixed output 3.3v kc: sc-82 4.15: fixed output 4.15v g1: green bcd semiconductor's pb-free pr oducts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. 4.2: fixed output 4.2v
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 5 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited parameter symbol value unit input voltage v in 6.5 v enable input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance ja sot-23-3 200 o c/w sot-23-5 200 sc-70-5 300 sc-82 300 esd (human body model) esd 6000 v esd (machine model) esd 400 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in v out +0.5v 6 v operating ambient temperature range t a -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 6 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.8v 1ma i out 30ma 1.764 1.8 1.836 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =1.76v 300 360 ma load regulation v rload v in =2.8v 1ma i out 300ma 6mv line regulation v rline 2.8v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 10 12 mv i out =100ma 100 120 i out =300ma 300 360 quiescent current i q v in =2.8v, i out = 0ma 60 90 a standby current i std v in =2.8v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.8v f=100hz 70 db f=1khz 70 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =2.8v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-1.8 electrical characteristics
7 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =3.5v 1ma i out 30ma 2.45 2.5 2.55 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =2.45v 300 360 ma load regulation v rload v in =3.5v 1ma i out 300ma 10 mv line regulation v rline 3.5v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =3.5v, i out = 0ma 60 90 a standby current i std v in =3.5v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =3.5v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =3.5v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-2.5 electrical characteristics
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 8 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =3.8v 1ma i out 30ma 2.744 2.8 2.856 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =2.74v 300 360 ma load regulation v rload v in =3.8v 1ma i out 300ma 11 mv line regulation v rline 3.8v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =3.8v, i out = 0ma 60 90 a standby current i std v in =3.8v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =3.8v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =3.8v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-2.8 electrical characteristics
9 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet parameter symbol conditions min typ max unit output voltage v out v in =4.0v 1ma i out 30ma 2.94 3.0 3.06 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =2.94v 300 360 ma load regulation v rload v in =4.0v 1ma i out 300ma 12 mv line regulation v rline 4.0v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =4.0v, i out = 0ma 60 90 a standby current i std v in =4.0v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =4.0v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =4.0v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-3.0 electrical characteristics electrical characteristics (continued)
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 10 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out v in =4.3v 1ma i out 30ma 3.234 3.3 3.366 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =3.23v 300 360 ma load regulation v rload v in =4.3v 1ma i out 300ma 13 mv line regulation v rline 4.3v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =4.3v, i out = 0ma 60 90 a standby current i std v in =4.3v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =4.3v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =4.3v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-3.3 electrical characteristics electrical characteristics (continued)
11 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet parameter symbol conditions min typ max unit output voltage v out v in =5.15v 1ma i out 30ma 4.067 4.15 4.233 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =4.06v 300 360 ma load regulation v rload v in =5.15v 1ma i out 300ma 13 mv line regulation v rline 5.15v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =5.15v, i out = 0ma 60 90 a standby current i std v in =5.15v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =5.15v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =5.15v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwis e specified.) ap2125-4.15 electrical characteristics electrical characteristics (continued)
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 12 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out v in =5.2v 1ma i out 30ma 4.116 4.2 4.284 v input voltage v in 6v maximum output current i out(max) v in -v out =1v, v out =4.12v 300 360 ma load regulation v rload v in =5.2v 1ma i out 300ma 13 mv line regulation v rline 5.2v v in 6v i out =30ma 1mv dropout voltage v drop i out =10ma 6.5 10 mv i out =100ma 65 100 i out =300ma 200 300 quiescent current i q v in =5.2v, i out = 0ma 60 90 a standby current i std v in =5.2v v ce in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =5.2v f=100hz 65 db f=1khz 65 db output voltage temperature coefficient ( ? v out /v out )/ ? ti out =30ma 100 ppm/ o c short current limit i short v out =0v 50 ma rms output noise v noise 10hz f 100khz 50 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.4 v thermal shutdown 160 o c thermal shutdown hyster- esis 25 o c (v in =5.2v, t a =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2125-4.2 electrical characteristics electrical characteristics (continued)
13 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet typical performance characteristics figure 4. output volt age vs. output current 0 50 100 150 200 250 300 1.70 1.72 1.74 1.76 1.78 1.80 1.82 1.84 1.86 1.88 1.90 ap2125-1.8 v in =2.8v t c =25 o c output voltage (v) output current (ma) 0 50 100 150 200 250 300 3.30 3.32 3.34 3.36 3.38 3.40 3.42 3.44 3.46 3.48 3.50 ap2125-3.3 v in =4.3v t c =25 o c output voltage (v) output current (ma) figure 5. output voltage vs. output current figure 6. dropout volt age vs. output current 0 30 60 90 120 150 180 210 240 270 300 0 40 80 120 160 200 240 280 320 360 400 ap2125-1.8 v in =2.8v t c =-40 o c t c =25 o c t c =85 o c dropout voltage (mv) output current (ma) 0 30 60 90 120 150 180 210 240 270 300 0 40 80 120 160 200 240 280 320 360 400 t c =-40 o c t c =25 o c t c =85 o c ap2125-3.3 v in =4.3v dropout voltage (mv) output current (ma) figure 7. dropout voltage vs. output current
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 14 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 8. dropout voltage vs. case temperature figure 10. current limit -25 0 25 50 75 0 40 80 120 160 200 240 280 320 360 400 ap2125-1.8 v in =2.8v i out =10ma i out =100ma i out =200ma i out =300ma dropout voltage (mv) case temperature ( o c) 0 50 100 150 200 250 300 350 400 450 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2125-1.8 t c =25 o c output voltage (v) output current (ma) v in =2.8v v in =6v typical performance ch aracteristics (continued) -25 0 25 50 75 0 40 80 120 160 200 240 280 320 360 400 ap2125-3.3 v in =4.3v i out =10ma i out =100ma i out =200ma i out =300ma dropout voltage (mv) case temperature ( o c) figure 9. dropout voltage vs. case temperature 0 50 100 150 200 250 300 350 400 450 500 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ap2125-3.3 t c =25 o c output voltage (v) output current (ma) v in =4.3v v in =6v figure 11. current limit
15 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet figure 12. current limit typical performance ch aracteristics (continued) 0 50 100 150 200 250 300 350 400 450 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2125-1.8 v in =2.8v output voltage (v) output current (ma) t c =-40 o c t c =25 o c t c =85 o c 0 50 100 150 200 250 300 350 400 450 500 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ap2125-3.3 v in =4.3v output voltage (v) output current (ma) t c =-40 o c t c =25 o c t c =85 o c figure 13. current limit figure 14. output voltage vs. input voltage figure 15. output voltage vs. input voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2125-1.8 t c =25 o c output voltage (v) input voltage (v) 1ma 100ma 300ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ap2125-3.3 t c =25 o c output voltage (v) input voltage (v) 1ma 100ma 300ma
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 16 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 18. output voltage vs. case temperature -25 0 25 50 75 1.70 1.72 1.74 1.76 1.78 1.80 1.82 1.84 1.86 1.88 1.90 ap2125-1.8 v in =2.8v output voltage (v) case temperature ( o c) i out =10ma i out =30ma i out =100ma i out =300ma 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2125-1.8 t c =25 o c no load output voltage (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c figure 16. output voltage vs. input voltage 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ap2125-3.3 t c =25 o c no load output voltage (v) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c figure 17. output voltage vs. input voltage -25 0 25 50 75 3.20 3.22 3.24 3.26 3.28 3.30 3.32 3.34 3.36 3.38 3.40 ap2125-3.3 v in =4.3v output voltage (v) case temperature ( o c) i out =10ma i out =30ma i out =100ma i out =300ma figure 19. output volt age vs. case temperature
17 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet figure 20. supply current vs. input voltage 0123456 0 10 20 30 40 50 60 70 80 90 100 ap2125-1.8 no load t c =-40 o c t c =25 o c t c =85 o c supply current ( a) input voltage (v) typical performance ch aracteristics (continued) 0123456 0 10 20 30 40 50 60 70 80 90 100 t c =-40 o c t c =25 o c t c =85 o c ap2125-3.3 no load supply current ( a) input voltage (v) figure 21. supply current vs. input voltage figure 22. supply current vs. case temperature -40 -20 0 20 40 60 80 40 44 48 52 56 60 64 68 72 76 80 supply current ( a) case temperature ( o c) ap2125-1.8 v in =2.8v no load -40-20 0 20406080 40 44 48 52 56 60 64 68 72 76 80 ap2125-3.3 v in =4.3v no load supply current ( a) case temperature ( o c) figure 23. supply current vs. case temperature
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 18 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 24. supply current vs. output current typical performance ch aracteristics (continued) 0 50 100 150 200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80 90 100 110 120 130 ap2125-1.8 v in =2.8v supply current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c 0 50 100 150 200 250 300 350 400 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 ap2125-3.3 v in =4.3v supply current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c figure 27. supply current vs. output current figure 26. supply current vs. output current figure 25. supply current vs. output current 0 40 80 120 160 200 240 280 320 360 400 440 480 0 10 20 30 40 50 60 70 80 90 100 110 120 ap2125-1.8 t c =25 o c supply current ( a) output current (ma) v in =2.8v v in =6v 0 40 80 120 160 200 240 280 320 360 400 0 15 30 45 60 75 90 105 120 135 150 ap2125-3.3 t c =25 o c supply current ( a) output current (ma) v in =4.3v v in =6v
19 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet figure 28. line transient figure 30. load transient (conditions: i out =30ma, c out =1 f, v in =2.8 to 3.8v) ? v out (0.02v/div) v in ( 1 v / d i v ) ap2125-1.8 0 2.8 3.8 0.02 -0.02 4.8 (conditions: i out =10 to 100ma, c in =1 f, v out (0.02v/div) i out (50ma/div) time (40 s/div) ap2125-1.8 0 100 1.82 1.8 1.84 50 time (40 s/div) c out =1 f, v in =2.8 v) typical performance ch aracteristics (continued) figure 31. load transient (conditions: i out =10 to 100ma, c in =1 f, c out =1 f, v in =4.3 v) v out (0.02v/div) i out (50ma/div) time (40 s/div) ap2125-3.3 0 100 3.32 3.3 3.34 50 figure 29. line transient ap2125-3.3 (conditions: i out =30ma, c out =1 f, v in =4 to 5v) ? v out (0.05v/div) v in (0.5v/div) 0 4 4.5 0.05 -0.05 5 time (100 s/div)
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 20 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 34. psrr typical performance ch aracteristics (continued) 10 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2125-1.8 v in =2.8v i out =30ma 10 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2125-3.3 v in =4.3v i out =30ma figure 35. psrr figure 32. enable input response and auto-discharge (conditions: v ce =0 to 3v, c in =1 f, c out =1 f, v in =3v, no load) v ce (1v/div) v out (1v/div) time (200 s/div) ap2125-2.8 1 3 2 1 3 2 0 0 figure 33. esr vs. output current 0 50 100 150 200 250 300 0.1 1 10 100 1000 stable area ap2125-1.8 c in = 1 f c out = 1 f esr ( ? ) output current (ma)
21 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet typical performance ch aracteristics (continued) figure 36. power dissipation vs. ambient temperature figure 37. power dissipation vs. ambient temperature 30 40 50 60 70 80 90 100 110 120 0 50 100 150 200 250 300 350 400 450 500 550 600 power dissipation (mw) ambient temperature ( o c) ap2125-1.8 package: sc-70-5 no heatsink 30 40 50 60 70 80 90 100 110 120 0 100 200 300 400 500 600 700 800 power dissipation (mw) ambient temperature ( o c) ap2125-3.3 package: sc-70-5 no heatsink
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 22 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical application figure 38. typical application of ap2125 v in ap2125-1.8 c in 1 f c out 1 f v out v in v out gnd v in ap2125-3.0 c in 1 f c out 1 f v out v in v out gnd ce nc v in =2.8v v out =1.8v v out =3v v in =4v
23 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet mechanical dimensions sot-23-3 unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 0.950(0.037) typ 0.300(0.012) 0.500(0.020) 1.500(0.059) 1.700(0.067) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 1.450(0.057) max. 0.200(0.008) 0 8
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 24 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
25 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet mechanical dimens ions (continued) sc-70-5 unit: mm(inch) 2.000(0.079) 2.200(0.087) 2.150(0.085) 2.450(0.096) 1.150(0.045) 1.350(0.053) 0.650(0.026)typ 1.200(0.047) 1.400(0.055) 0.150(0.006) 0.350(0.014) 0.525(0.021)ref 0.080(0.003) 0.150(0.006) 0 8 0.200(0.008) 0.260(0.010) 0.460(0.018) 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.000(0.039) 0.900(0.035) 1.100(0.043)
300ma high speed, extremely low noise cmos ldo regulator ap2125 data sheet 26 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sc-82 unit: mm(inch) 1.800(0.071) 2.400(0.094) 1.150(0.045) 1.350(0.053) 0.250(0.010) 0.400(0.016) 0.350(0.014) 0.500(0.020) 1.300(0.051) typ 1.800(0.071) 2.200(0.087) 0.700(0.027) 1.000(0.039) 0.800(0.031) 1.100(0.043) 0.000(0.000) 0.100(0.004) 0.100(0.004) 0.260(0.010) 0.260(0.010) 0.460(0.018) 0.150(0.006) typ 4 12 4 12 4 12 0 8
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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